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  • “Formation and Characterization of Tensile-strained Ge layers on Ge1-xSnx Buffer Layers”, Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima, The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Japan, Dec. 9-13, 2008.
  • “Strain and interfacial defects in directly bonded Si substrates”, Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, H. Tajiri, O. Sakata and S. Kimura, The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Japan, Dec. 9-13, 2008.
  • “Atomistic analysis of directly bonded Si substrate interface”, T. Ueda, Y. Ohara, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, T. Sakata, and H. Mori, The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Japan, Dec. 9-13, 2008.

    • 2007
    1. Invited: “Strain and dislocations in group IV semiconductor heterostructures”, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima, Materials Research Society 2007 Spring Meeting, San Francisco, USA, Apr. 9-13, 2007.
    2. “Characterization of bonding structures of directly bonded hybrid crystal orientation substrates”, E. Toyoda, A. Sakai, H. Isogai, T. Senda, K. Izunome, O. Nakatsuka, M. Ogawa, and S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures, pp. 337-338, Marseille, France, May 20-25, 2007.
    3. “Formation of high-density Si nanodots by agglomeration of ultra-thin amorphous Si films”, H. Kondo, T. Ueyama, E. Ikenaga, K. Kobayashi, A. Sakai, M. Ogawa, and S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures, pp. 305-306, Marseille, France, May 20-25, 2007.
    4. Invited: “Silicide and germanide technology for contacts and gates in MOSFET applications”, S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures, pp. 71-72, Marseille, France, May 20-25, 2007.
    5. “Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates”, S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures, pp. 36-37, Marseille, France, May 20-25, 2007.
    6. “Impact of Pt Incorporation on Thermal Stability of NiGe Layers on Ge(001) Substrates”, O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima, 7th International Workshop on Junction Technology 2007, pp. 87-88, Kyoto, Japan, June 8-9, 2007.
    7. “Development of new high-density radical sources and its application to radical nitridation of Ge surfaces”, H. Kondo, S. Oda, S. Takashima, A. Sakai, M. Ogawa, S. Zaima, M. Hori, S. Den, H. Kano, The 20th Symposium on Plasma Science for Materials, p. 128, Nagoya, Japan, June 21-22, 2007.
    8. “Pr-Oxide-Based Dielectric Films on Ge Substrates”,  M. Sakashita, N. Kito, A. Sakai, H. Kondo, O. Nakatsuka, M. Ogawa and S. Zaima, 2007 International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sept. 18-21, 2007.
    9. “Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors”, K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa and S. Zaima, 2007 International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sept. 18-21, 2007.
    10. “Surface Treatment of Ge(001) Surface by Radical Nitridation”, H. Kondo, M. Fujita, A. Sakai, M. Ogawa and S. Zaima, 2007 International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sept. 18-21, 2007.
    11. “Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System”, O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa and S. Zaima, 2007 International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sept. 18-21, 2007.
    12. Invited: “Silicide and Germanide Technology for Contacts and Metal Gates in MOSFET Applications”, S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa, 212th Electrochemical Society Meeting, Washington D.C., USA, Oct. 7-12, 2007.
    13. “Contact Propeties of Epitaxial NiSi2/Heavily Doped Si Structures Formed from Ni/Ti/Si Systems”, S. Akimoto, O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima, Advanced Metallization Conference 2007: 17th Asian Session, pp. 90-91, Tokyo, Japan, Oct. 23-24, 2007.
    14. “Structural and Electrical Properties of Metal-germanide MOS Gate Electrodes”, H. Kondo, D. Ikeno, Y. Kaneko, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, The Sixth Pacific Rim Inernational Conference on Advanced Materials and Processing, p. 26, Jeju, Korea, Nov. 5-9, 2007.
    15. “Electrical and Crystalline Properties of Epitaxial NiSi2/Si Contacts Fromed in Ni/Ti/Si(001) Systems”, O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa, and S. Zaima, The Sixth Pacific Rim Inernational Conference on Advanced Materials and Processing, p. 72, Jeju, Korea, Nov. 5-9, 2007.
    16. “Tensile Strained Ge Layers Grown on Compositionally Step-Graded Ge1-xSnx Buffer Layers”, Y. Shimura, S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima, The 3nd international workshop on new group IV semiconductor nanoelectronics, pp. 29-30, Sendai, Japan, Nov. 8-9, 2007.
    17. Invited: “Growth and Characterization of Tensile-Strained Ge Layers on Strain Relaxed Ge1-xSnx Buffer Layers”, O. Nakatsuka, S. Takeuchi, A. Sakai, M. Ogawa, and S. Zaima, The 3nd international workshop on new group IV semiconductor nanoelectronics, pp. 75-76, Sendai, Japan, Nov. 8-9, 2007.
    18. Invited: “Defect Control for Ge/Si and  Ge1-xSnx/Ge/Si Heterostructures”, A. Sakai, S. Takeuchi, O. Nakatsuka, M. Ogawa, and S. Zaima, Fifth International Symposium on Control of Semiconductor Interfaces, pp. 31-32, Tokyo, Japan, , Nov. 12-14, 2007.
    19. “Characterization of Local Strains in Si1-xGex Hetero-mesa Structures on Si(001) Substrates by Using X-ray Microdiffraction”, O. Nakatsuka, K. Yukawa, S. Mochizuki, A. Sakai, K. Fukuda, S. Kimura, O. Sakata, K. Izunome, T. Senda, E. Toyoda, M. Ogawa, and S. Zaima, Fifth International Symposium on Control of Semiconductor Interfaces, pp. 41-42, Tokyo, Japan, Nov. 12-14, 2007.
    20. “Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge1-xSnx Layers on Ge(001) Substrates”, M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima, Fifth International Symposium on Control of Semiconductor Interfaces, pp. 85-86, Tokyo, Japan, Nov. 12-14, 2007.
    21. “Effect of alcohol sources on synthesis of single-walled carbon nanotubes”, S. Oida, A. Sakai, O. Nakatuska, M. Ogawa, and S. Zaima,  9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, Tokyo, Japan, Nov. 11-15, 2007.
    22. “Formation of high-density Si nanodots and characterization of chemical bonding states by soft-X-ray photoelectron spectroscopy”, H. Kondo, 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, Tokyo, Japan, Nov. 11-15, 2007.
    23. Invited: “Controlling Interface Properties of Silicide/Si Contacts for Si ULSI Applications”, S. Zaima, O. Nakatsuka, A. Sakai, and M. Ogawa, 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, Tokyo, Japan, Nov. 11-15, 2007.

     

    2006
    1. “Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(001) system”, O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima, Materials for Advanced Metallization Conference 2006, pp. 177-178, Grenoble, Frence, Mar. 5-8, 2006.
    2. “Systematic Characterization of Ni Full Silicide in Sub-100 nm Gate Regions”, D. Ito, A. Sakai, O. Nakatsuka, H. Kondo, Y. Akasaka, M. Ogawa, and S. Zaima, 2006 MRS Spring Meeting, San Francisco, USA, Apr. 17-21, 2006.
    3. Invited: “Control and characterization of strain in SiGe/Si heterostructures with engineered misfit dislocations”, A. Sakai, N. Taoka, S. Mochizuki, K. Yukawa, O. Nakatsuka, S. Takeda, S. Kimura, M. Ogawa, and S. Zaima, The third International SiGe Technology and Device Meeting, pp. 232-233, Princeton, USA, May 15-17, 2006.
    4. “Strain relaxation of patterned Ge and SiGe structures on Si(001) substrates”, S. Mochizuki, A. Sakai, O. Nakatsuka, H. Kondo, K. Yukawa, K. Izunome, T. Senda, E. Toyoda, M. Ogawa, and S. Zaima, The third International SiGe Technology and Device Meeting, pp. 258-259, Princeton, USA, May 15-17, 2006.
    5. “Growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers on virtual Ge(001) substrates”, S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima, The third International SiGe Technology and Device Meeting, pp. 98-99, Princeton, USA, May 15-17, 2006.
    6. Invited: “Nano-scale Observations for Local Current Leakage in High-k Gate Dielectrics Using Conductive-Atomic Force Microscopy”,  S. Zaima, A. Seko, T. Sago, M. Sakashita, A. Sakai, and M. Ogawa, The E-MRS 2006 Spring Meeting (E-MRS - IUMRS - ICEM 06), Nice, France, May 29-June 2, 2006.
    7. Keynote Lecture: “Silicides and Related-Materials for ULSI Applications”,  S. Zaima, A. Sakai, and M. Ogawa, Asia-Pacific Conference on Semiconducting Silicides: Science and Technology Towards Substainable Optoelectronics, pp. 1-2, Kyoto, Japan, July 29-31, 2006.
    8. Invited lecture: “Nano-scale Observations for degradation phenomena in High-k gate dielectrics using conductive-atomic force microscopy”, S. Zaima, A. Seko, M. Sakashita, A. Sakai and M. Ogawa, The IUMRS International Conference in Asia 2006 , Sept. 10-14, 2006, Jeju, Korea.
    9. “Behavior of Local Charge Trapping Sites in La2O3-Al2O3 Comosite Films under Constant Voltage Stress”, T. Sago, A. Seko, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, 2006 International Conference on Solid State Devices and Materials, pp. 418-419, Sept. 12-15, 2006, Yokohama, Japan.
    10. “Comparison Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes”, D. Ikeno, K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, 2006 International Conference on Solid State Devices and Materials, pp. 442-443, Sept. 12-15, 2006, Yokohama, Japan.
    11. Invited: “Hard X-ray Photoelectron Spectroscopy Study on Buried Interfaces in Next Generation CMOS Devices”, T. Hattori and S. Zaima, The 2nd International Workshop on Hard X-ray Photoelectron Spectroscopy, p. 20, Sept. 19-20, 2006, Hyogo, Japan.
    12. “Interfacial Structure of HfON/SiN/Si Gate Stacks”, O. Nakatsuka, M. Sakashita, H. Kondo, E. Ikenaga, M. Kobata, J.-J. Kim, H. Nohira, T. Hattori, A. Sakai, M. Ogawa, S. Zaima, The 2nd International Workshop on Hard X-ray Photoelectron Spectroscopy, p. 102, Sept. 19-20, 2006, Hyogo, Japan.
    13. “Dislocation Structure and Strain Relaxation of SiGe and Ge Sub-micron Stripe Lines on Si(001) Substrates”, O. Nakatsuka, S. Mochizuki, A. Sakai, H. Kondo, K. Yukawa, M. Ogawa, and S. Zaima, The 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 69-70, Oct. 2-3, 2006, Sendai, Japan.
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